The global semiconductor shortage has highlighted the critical role of investment in chip research and development and the importance of chips in everything from computing, to appliances, communication devices, transportation systems and critical infrastructure.
IBM and Samsung Electronics have jointly announced a breakthrough in semiconductor design using a new vertical transistor architecture that demonstrates a path to scaling beyond nanosheet and has the potential to reduce energy usage by 85 per cent compared to a scaled fin field-effect transistor (finFET).
The new vertical transistor breakthrough could help the semiconductor industry continue its relentless journey to deliver significant improvements, including a potential device architecture that enables semiconductor device scaling to continue beyond nanosheet, smartphone batteries that could last a week or more without being charged, and energy-intensive processes, such as cryptomining operations...
