The researchers have been able to build a flash memory device that can withstand the hazards encountered by space probes, including exposure to radiation and huge temperature swings, which can be challenging for traditional electronic circuits.

Although semiconductors are usually made from silicon, gallium oxide allows scientists to build devices that can support high currents and voltages with low energy losses.  In addition to space missions, the flash memory device could potentially be used in locations with risk of radiation or extreme conditions on Earth. 

Gallium oxide is an ultra-wide band gap semiconductor material. It is usually a poor conductor of electricity, but incorporating certain impurities can enable it to carry an electrical current.

“Gallium oxide-based devices have become a prominent choice to operate in adverse environments, especially in space exploration, because it can withstand high temperatures and radiation without serious degradation...